GBL08L-5306E3/45
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | GBL08L-5306E3/45 |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | BRIDGE RECT 1PHASE 800V 3A GBL |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Spitzensperr- (max) | 800 V |
Spannung - Forward (Vf) (Max) @ If | 1 V @ 4 A |
Technologie | Standard |
Supplier Device-Gehäuse | GBL |
Serie | - |
Verpackung / Gehäuse | 4-SIP, GBL |
Paket | Tube |
Produkteigenschaften | Eigenschaften |
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Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Diodentyp | Single Phase |
Strom - Sperrleckstrom @ Vr | 5 µA @ 800 V |
Strom - Richt (Io) | 3 A |
Grundproduktnummer | GBL08 |
BRIDGE RECT 1PHASE 1KV 3A GBL
BRIDGE RECT 1PHASE 800V 4A GBL
BRIDGE RECT 4A GPP 800V GBL
DIODE GPP 1PH 4A 800V GBL
BRIDGE RECT 1PHASE 800V 3A GBL
BRIDGE RECT 1PHASE 800V 3A GBL
BRIDGE RECT 4A GPP 800V GBL
BRIDGE RECT 1PHASE 1KV 4A GBL
4A -1000V - GBL - BRIDGE
BRIDGE RECT 1PHASE 1KV 4A GBL
DIODE GPP 1PH 4A 800V GBL
BRIDGE RECT 1PHASE 800V 4A GBL
BRIDGE RECT 1PHASE 800V 3A GBL
BRIDGE RECT 1PHASE 800V 4A GBJ
BRIDGE RECT 1PHASE 800V 3A GBL
BRIDGE RECT 1PHASE 1KV 4A GBL
DIODE GPP 1PH 4A 1000V GBL
4A, 800V, STANDARD BRIDGE RECTIF
BRIDGE RECT 1PHASE 800V 3A GBL
BRIDGE RECT 1PHASE 800V 4A GBL
2024/05/23
2024/11/4
2024/04/11
2025/02/11
GBL08L-5306E3/45Vishay General Semiconductor - Diodes Division |
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